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CYStech Electronics Corp.
Silicon NPN Epitaxial Planar Transistor
Spec. No. : C855A3 Issued Date : 2004.12.23 Revised Date : 2005.04.29 Page No. : 1/4
BTD1857A3
Description
* High BVCEO * High current capability * Complementary to BTB1236A3 * Pb-free package
Symbol
BTD1857A3
Outline
TO-92
BBase CCollector EEmitter
ECB
Absolute Maximum Ratings (Ta=25C)
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation @TA=25 Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PD Tj Tstg Limits 180 180 5 1.5 3 750 150 -55~+150 Unit V V V A A mW C C
BTD1857A3
CYStek Product Specification
CYStech Electronics Corp.
Characteristics (Ta=25C)
Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE(on) hFE1 hFE2 fT Cob Min. 180 180 5 0.45 82 30 Typ. 140 27 Max. 1 1 0.6 0.8 390 Unit V V V A A V V MHz pF
Spec. No. : C855A3 Issued Date : 2004.12.23 Revised Date : 2005.04.29 Page No. : 2/4
Test Conditions IC=50A, IE=0 IC=1mA, IB=0 IE=50A, IC=0 VCB=160V, IE=0 VEB=4V, IC=0 IC=1A, IB=100mA VCE=5V, IC=5mA VCE=5V, IC=200mA VCE=5V, IC=500mA VCE=5V, IC=150mA VCB=10V, IE=0, f=1MHz
*Pulse Test: Pulse Width 380s, Duty Cycle2%
Classification of hFE 1
Rank Range P 82~180 Q 120~270 R 180~390
BTD1857A3
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves
Current Gain vs Collector Current
1000
VCE=5V Tj=125
Spec. No. : C855A3 Issued Date : 2004.12.23 Revised Date : 2005.04.29 Page No. : 3/4
Saturation Voltage vs Collector Current
1000
VCE(SAT)@IC=10IB
Saturation Voltage---(mV)
Current Gain---HFE
100
Tj=75 Tj=25
100
Tj=125 Tj=75
Tj=25
10 1 10 100 1000 Collector Current---IC(mA) 10000
10 10 100 1000 Collector Current---IC(mA) 10000
Saturation Voltage vs Collector Current
1000
Tj=25
On Voltage vs Collector Current
1000
Tj=25
Saturation Voltage---(mV)
Tj=125 Tj=75
On Voltage---(mV)
Tj=125 Tj=75
VBE(SAT)@IC=10IB
VBE(ON)@VCE=5V
100 1 10 100 1000 10000 Collector Current---IC(mA)
100 1 10 100 1000 10000 Collector Current---IC(mA)
Power Derating Curve
0.8 Power Dissipation---PD(W) 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 50 100 150 Ambient Temperature---TA() 200
BTD1857A3
CYStek Product Specification
CYStech Electronics Corp.
TO-92 Dimension
Marking:
Spec. No. : C855A3 Issued Date : 2004.12.23 Revised Date : 2005.04.29 Page No. : 4/4
A B
1 2 3
2
D1857
3
C
D
H I E F
G
1
Style: Pin 1.Emitter 2.Collector 3.Base 3-Lead TO-92 Plastic Package CYStek Package Code: A3
*: Typical
DIM A B C D E F
Inches Min. Max. 0.1704 0.1902 0.1704 0.1902 0.5000 0.0142 0.0220 *0.0500 0.1323 0.1480
Millimeters Min. Max. 4.33 4.83 4.33 4.83 12.70 0.36 0.56 *1.27 3.36 3.76
DIM G H I 1 2 3
Inches Min. Max. 0.0142 0.0220 *0.1000 *0.0500 *5 *2 *2
Millimeters Min. Max. 0.36 0.56 *2.54 *1.27 *5 *2 *2
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
* Lead: 42 Alloy ; solder plating * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
* All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. * CYStek reserves the right to make changes to its products without notice. * CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTD1857A3
CYStek Product Specification

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